IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 对比
详细并排对比 IPB051N15NM6ATMA1 出自 Infineon 和 IPB110P06LMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ 量产中规格对比
| 参数 | IPB051N15NM6ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.02 | $1.31 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Continuous Drain Current (ID) at TC=25C | 139 A | -100 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | — |
| Gate Charge (Qg) Typical | 51 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 234 W | — |
| 工作温度范围 | -55C to +175C | -55 C to +175 C (TJ) |
| 封装 / 外壳 | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Drain, Source, Gate) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes | — |
| Technology | — | OptiMOS (trench MOSFET) |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Lead-Free | — | Yes |