IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 对比

详细并排对比 IPB100N04S4H2ATMA1 出自 Infineon 和 IPB037N06N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPB100N04S4H2ATMA1 IPB037N06N3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $1.41
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) OptiMOS 3 (N-channel, enhancement mode)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2.0 V to 3.5 V
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
工作结温 -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
封装 PG-TO263-3-2 (D2PAK-2) Surface Mount —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260C peak reflow) 1 (unlimited)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — IPB037N06N3GATMA1
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) Max — 3.7 mOhm at VGS=10V
Total Power Dissipation (Pd) at Tc — 188 W
工作温度范围 — -55 C to +175 C (junction)
封装 / 外壳 — PG-TO263-3 (D2PAK, surface mount)
Gate Charge (Qg) Typ — [DATA_NEEDED: gate charge value]
RoHS 状态 — Compliant
Drain Tab Connection — Tab electrically tied to drain

数据手册与资源

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