IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IPB037N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.41 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.0 V to 3.5 V |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 (unlimited) |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPB037N06N3GATMA1 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| On-Resistance RDS(on) Max | β | 3.7 mOhm at VGS=10V |
| Total Power Dissipation (Pd) at Tc | β | 188 W |
| Operating Temperature Range | β | -55 C to +175 C (junction) |
| Package / Case | β | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: gate charge value] |
| RoHS Status | β | Compliant |
| Drain Tab Connection | β | Tab electrically tied to drain |