IPB100N04S4H2ATMA1 vs IPB110P06LMATMA1 对比
详细并排对比 IPB100N04S4H2ATMA1 出自 Infineon 和 IPB110P06LMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 量产中
规格对比
| 参数 | IPB100N04S4H2ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $1.31 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | -60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | -100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| 工作结温 | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| 封装 | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| 工作温度范围 | — | -55 C to +175 C (TJ) |
| 封装 / 外壳 | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |