IPB100N04S4H2ATMA1 vs IPB110P06LMATMA1 Comparación
Comparación detallada lado a lado de IPB100N04S4H2ATMA1 por Infineon y IPB110P06LMATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IPB100N04S4H2ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,42 | $1,31 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | -60 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | -100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Encapsulado | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (TJ) |
| Encapsulado / Carcasa | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |