IPB110P06LMATMA1 vs IPL65R115CFD7AUMA1 对比
详细并排对比 IPB110P06LMATMA1 出自 Infineon 和 IPL65R115CFD7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB110P06LMATMA1 | IPL65R115CFD7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.31 | $2.70 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | CoolMOS CFD7 (Superjunction) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| 工作温度范围 | -55 C to +175 C (TJ) | -55 °C to +150 °C (TJ) |
| 封装 / 外壳 | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 24 A |
| Power Dissipation (PD, Tc) | — | 144 W |
| On-State Resistance (RDS(on)) | — | 115 mΩ at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate-Source Threshold (VGS(th)) | — | 3.5 V (typ) |
| Body Diode | — | Integrated Fast Recovery |
| 封装 | — | PG-VSON-4 (VSON-4 EP) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |