IPB110P06LMATMA1 vs IPL65R115CFD7AUMA1 Comparison

Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPL65R115CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 βœ“ Active
Infineon
IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1 - 650V 24A 115mΞ© CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 βœ“ Active

Specification Comparison

Parameter IPB110P06LMATMA1 IPL65R115CFD7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.31 $2.70
FET Type P-Channel N-Channel
Technology OptiMOS (trench MOSFET) CoolMOS CFD7 (Superjunction)
Drain-Source Voltage (VDS) -60 V β€”
Continuous Drain Current (ID) at TC=25C -100 A β€”
Maximum Power Dissipation (PD) at TC=25C 300 W β€”
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A β€”
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA β€”
Gate-Source Voltage (VGS max) +/-20 V β€”
Operating Temperature Range -55 C to +175 C (TJ) -55 Β°C to +150 Β°C (TJ)
Package / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) β€”
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 β€”
Gate Drive Level Logic-level compatible β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Drain-to-Source Voltage (VDS) β€” 650 V
Continuous Drain Current (ID, Tc) β€” 24 A
Power Dissipation (PD, Tc) β€” 144 W
On-State Resistance (RDS(on)) β€” 115 mΞ© at VGS=10V, ID=9.7A
Gate-Source Voltage (VGS) β€” Β±20 V (max)
Gate-Source Threshold (VGS(th)) β€” 3.5 V (typ)
Body Diode β€” Integrated Fast Recovery
Package β€” PG-VSON-4 (VSON-4 EP)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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