IPB110P06LMATMA1 vs IPL65R115CFD7AUMA1 Vergleich
Detaillierter Direktvergleich von IPB110P06LMATMA1 von Infineon und IPL65R115CFD7AUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB110P06LMATMA1 | IPL65R115CFD7AUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,31 | $2,70 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | CoolMOS CFD7 (Superjunction) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | -55 °C to +150 °C (TJ) |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 24 A |
| Power Dissipation (PD, Tc) | — | 144 W |
| On-State Resistance (RDS(on)) | — | 115 mΩ at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| Gate-Source Threshold (VGS(th)) | — | 3.5 V (typ) |
| Body Diode | — | Integrated Fast Recovery |
| Gehäuse | — | PG-VSON-4 (VSON-4 EP) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |