IPB120P04P4L03ATMA2 vs IPB70N10S3L12ATMA1 对比
详细并排对比 IPB120P04P4L03ATMA2 出自 Infineon 和 IPB70N10S3L12ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ 量产中Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ 量产中规格对比
| 参数 | IPB120P04P4L03ATMA2 | IPB70N10S3L12ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.74 | $1.65 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| 工作结温 | -55C to +175C | -55 °C to +175 °C |
| 封装 | PG-TO263-3-2 (D2PAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| RoHS 状态 | Compliant (per Infineon product page) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS (IPB70N10) |
| 晶体管类型 | — | N-Channel MOSFET, Enhancement Mode |
| Continuous Drain Current (ID) at TC=25°C | — | 70 A |
| Peak Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.8 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 125 W |
| 封装 / 外壳 | — | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 °C peak reflow) |
| RoHS / Green | — | RoHS Compliant, Green Product |
| Avalanche Tested | — | 100 % Avalanche Tested |
| 无卤 | — | Yes |