IPB120P04P4L03ATMA2 vs IPB70N10S3L12ATMA1 Comparison

Detailed side-by-side comparison of IPB120P04P4L03ATMA2 by Infineon and IPB70N10S3L12ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB120P04P4L03ATMA2 IPB70N10S3L12ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Operating Junction Temperature -55C to +175C -55 °C to +175 °C
Package PG-TO263-3-2 (D2PAK) —
Mounting Type Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Pin Count 3 (Gate, Drain, Source) —
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status Compliant (per Infineon product page) —
Manufacturer — Infineon Technologies
Series — OptiMOS (IPB70N10)
Transistor Type — N-Channel MOSFET, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 70 A
Peak Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10V — 11.8 mΩ
Power Dissipation (PD) at TC=25°C — 125 W
Package / Case — PG-TO263-3-2 (D2PAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
RoHS / Green — RoHS Compliant, Green Product
Avalanche Tested — 100 % Avalanche Tested
Halogen Free — Yes

Datasheets & Resources

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