IPB60R040CFD7ATMA1 vs IPL65R115CFD7AUMA1 对比

详细并排对比 IPB60R040CFD7ATMA1 出自 Infineon 和 IPL65R115CFD7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中
Infineon
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 ✓ 量产中

规格对比

参数 IPB60R040CFD7ATMA1 IPL65R115CFD7AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.19 $2.70
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CFD7 (Superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功耗(TC=25°C) 227 W —
工作温度范围 -55°C to +150°C -55 °C to +150 °C (TJ)
封装 PG-TO263-3-2 (D2PAK) PG-VSON-4 (VSON-4 EP)
安装类型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID, Tc) — 24 A
Power Dissipation (PD, Tc) — 144 W
On-State Resistance (RDS(on)) — 115 mΩ at VGS=10V, ID=9.7A
Gate-Source Voltage (VGS) — ±20 V (max)
Gate-Source Threshold (VGS(th)) — 3.5 V (typ)
Body Diode — Integrated Fast Recovery

数据手册与资源

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