IPB60R190C6ATMA1 vs IPP60R190P6XKSA1 对比
详细并排对比 IPB60R190C6ATMA1 出自 Infineon 和 IPP60R190P6XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB60R190C6ATMA1 | IPP60R190P6XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.45 | $1.02 |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | Superjunction (SJ) MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Total Gate Charge (Qg) typ | 32 nC | — |
| 工作温度范围 | -55C to +150C | -55C to +150C (junction) |
| 封装 | PG-TO263-3 (D2PAK) | PG-TO220-3 (through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| MSL 等级 | 1 | Not applicable (through-hole) |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P6 |
| Channel Type | — | N-Channel |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |