IPB60R190C6ATMA1 vs IPP60R190P6XKSA1 Comparison
Detailed side-by-side comparison of IPB60R190C6ATMA1 by Infineon and IPP60R190P6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R190C6ATMA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.02 |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | Superjunction (SJ) MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| Power Dissipation (PD) at Tc=25C | 151 W | β |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | β |
| Total Gate Charge (Qg) typ | 32 nC | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Package | PG-TO263-3 (D2PAK) | PG-TO220-3 (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| MSL Level | 1 | Not applicable (through-hole) |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS P6 |
| Channel Type | β | N-Channel |
| On-Resistance RDS(on) max at 25C | β | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | β | 151 W |
| Gate Drive Voltage (typical) | β | 10 V |
| Lead-Free | β | Yes |
| Product Variant | β | XKSA1 (industrial grade, tube pack) |