IPB60R280P7ATMA1 vs IAUT300N08S5N014ATMA1 对比
详细并排对比 IPB60R280P7ATMA1 出自 Infineon 和 IAUT300N08S5N014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB60R280P7ATMA1 | IAUT300N08S5N014ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $3.05 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 (600 V) | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| 封装 | PG-TO263-3 (D2PAK) | PG-HSOF-8-1 (8-pin + tab, Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 + Tab) | — |
| 工作温度范围 | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 300 A (DC) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 1.4 mΩ |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| Power Dissipation PD @ TC=25°C | — | 300 W |
| 工作结温 | — | -55 °C to +175 °C |
| MSL (Moisture Sensitivity Level) | — | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) |
| Peak Reflow Temperature | — | 260 °C |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % (per Infineon datasheet) |
| RoHS Compliance | — | Compliant (Green Product) |
| Technology Family | — | OptiMOS 5 (Infineon) |