IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
料号： IAUT300N08S5N014ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.8 | $5.80 |
| 10 | $5.1 | $51.00 |
| 100 | $4.2 | $420.00 |
| 500 | $3.55 | $1,775.00 |
| 1,000 | $3.05 | $3,050.00 |
IAUT300N08S5N014ATMA1 概述
A power MOSFET is a voltage-controlled majority-carrier switch in which a gate-source electric field modulates the conductance of a conducting channel between source and drain. N-channel enhancement-mode MOSFETs are the dominant switch topology in high-current DC-DC converters, motor drives, and synchronous-rectifier stages because their lower RDS(on) per unit silicon area delivers higher efficiency than P-channel counterparts. The IAUT family targets 48 V automotive subsystems (e.g., mild-hybrid ECUs, electric power steering, braking systems, brushless DC pumps and fans) where the 80 V drain rating provides ample headroom for transients on a nominal 48 V bus.
Key features include 1.4 mΩ typical RDS(on) at VGS=10 V, 300 A continuous DC ID at TC=25 °C, 300 W maximum power dissipation at TC=25 °C, AEC-Q101 automotive qualification, MSL1 floor-life (unlimited at ≤30 °C/85 % RH), RoHS-compliant lead-free package, 100 % avalanche-tested die, and an ultra-low figure of merit (FOM = RDS(on) × Qg) for fast-switching applications. The tab is the drain, which must be soldered to a sufficiently large copper pour to act as both thermal via and electrical node.
The die is built on Infineon's OptiMOS 5 trench technology, which lowers both on-resistance per cell and gate charge, thereby reducing conduction and switching losses simultaneously compared to earlier planar or stripe-cell generations. The PG-HSOF-8-1 package exposes the die directly to the PCB through a large source-clip lead frame, giving a junction-to-case thermal resistance typically below 0.5 °C/W and enabling the 300 W dissipation rating when the PCB thermal path is properly designed.
Typical applications include 48 V mild-hybrid automotive DC-DC converters, high-current brushless DC (BLDC) motor drives for electric power steering and water/oil pumps, automotive e-fuse and battery disconnect switches, synchronous rectification in telecom and server buck converters, and high-current solenoid/relay driver stages. The 80 V rating and 300 A pulse capability also suit industrial inverter sections operating from 24-48 V battery rails.
When designing with this part, keep the switching-node loop area minimal to control parasitic inductance and voltage overshoot, use a gate driver capable of sourcing/sinking 1-2 A peak to charge Qg quickly, and lay out at least 100-200 cm² of 2 oz copper on the drain tab to stay below the SOA envelope at high DC currents.
This page synthesizes distributor stock and pricing, AEC-Q101/OptiMOS family context, drop-in alternatives in the same PG-HSOF-8-1 footprint, and practical thermal/SOA design notes that are not contained in the manufacturer datasheet alone.
直接替换替代料： IAUT300N08S5N014ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUT300N08S5N014ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Technology, Mounting Type, Automotive Qualification.
快速对比工具——选择替代料号进行并排对比：
IAUS300N08S5N014TATMA1
✅ 直接替换📋 参考替代料（不在目录中）
IAUT300N08S5N011ATMA1
✅ 直接替换✓ 有现货
$5.4 / 个
查看数据手册 →IAUC120N06S5L015ATMA1
✅ 直接替换✓ 有现货
$0.92 / 个
查看数据手册 →ISC015N06NM5ATMA1
✅ 直接替换✓ 有现货
$0.62 / 个
查看数据手册 →IPB60R280P7ATMA1
✅ 直接替换✓ 有现货
$0.88 / 个
查看数据手册 →IAUT300N08S5N014ATMA1 最大额定值与电气特性
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ |
| Power Dissipation PD @ TC=25°C | 300 W |
| 工作结温 | -55 °C to +175 °C |
| 封装 | PG-HSOF-8-1 (8-pin + tab, Surface Mount) |
| 安装类型 | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) |
| Peak Reflow Temperature | 260 °C |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100 % (per Infineon datasheet) |
| RoHS Compliance | Compliant (Green Product) |
| Technology Family | OptiMOS 5 (Infineon) |
IAUT300N08S5N014ATMA1 引脚配置
| 引脚 1 | GATE — Gate input (driven by gate driver; 0 V off, +10 V on) |
| 引脚 2 | SOURCE — Source connection (low-side reference) |
| 引脚 3 | SOURCE — Source connection (low-side reference) |
| 引脚 4 | SOURCE — Source connection (low-side reference) |
| 引脚 5 | SOURCE — Source connection (low-side reference) |
| 引脚 6 | SOURCE — Source connection (low-side reference) |
| 引脚 7 | SOURCE — Source connection (low-side reference) |
| 引脚 8 | SOURCE — Source connection (low-side reference) |
| 引脚 TAB | DRAIN — Drain / thermal pad (solder to copper pour) |
安全工作区 (DC, TC=25°C)
典型应用
IAUT300N08S5N014ATMA1 适用于 6 应用s: 48V Mild-Hybrid DC-DC Converter, Automotive BLDC Motor Drive (EPS / Pumps / Fans), Automotive e-Fuse / Battery Disconnect Switch, 48V Synchronous Rectification (Telecom / Server Buck), Industrial High-Current Solenoid / Relay Driver, 48V Inverter Power Stage (Auxiliary Drives).
48V Mild-Hybrid DC-DC Converter
The IAUT300N08S5N014ATMA1 fits 48 V mild-hybrid automotive DC-DC converters as a high-side or low-side synchronous switch. Its 80 V VDS handles 48 V nominal plus inductive overshoot to ~60 V, while 300 A continuous ID covers 100-200 A converter designs with thermal margin. The 1.4 mΩ RDS(on) at VGS=10 V keeps full-load conduction loss under 30 W at 150 A, well below the 300 W PD rating, and OptiMOS 5's low Qg enables >100 kHz switching for smaller magnetics.
推荐
Automotive BLDC Motor Drive (EPS / Pumps / Fans)
The IAUT300N08S5N014ATMA1 serves as the half-bridge switch in automotive 48 V BLDC motor drives for electric power steering, coolant pumps, oil pumps, and HVAC fans. Its 300 A pulsed ID handles the inrush of mechanical-load transients, and the AEC-Q101 qualification plus 175 °C junction rating satisfy under-the-hood thermal requirements. The PG-HSOF-8-1 tab provides <0.5 °C/W junction-to-case thermal resistance, allowing sustained 100-150 A RMS phase currents when the PCB thermal path is engineered.
推荐
Automotive e-Fuse / Battery Disconnect Switch
The IAUT300N08S5N014ATMA1 is well-suited for 48 V e-fuse and battery disconnect switch positions where it must carry continuous DC bus current and interrupt fault currents within microseconds. Its 1.4 mΩ RDS(on) at full VGS keeps full-load voltage drop below 150 mV at 100 A, minimizing parasitic loss. The 100 % avalanche-tested die and ±20 V VGS rating provide robustness against inductive kick during fault interruption, while the AEC-Q101 screening satisfies ISO 26262 functional-safety design flows.
推荐
48V Synchronous Rectification (Telecom / Server Buck)
The IAUT300N08S5N014ATMA1 works as a synchronous-rectifier low-side switch in 48 V-input telecom and server buck converters. Its 1.4 mΩ RDS(on) at VGS=10 V competes effectively with planar MOSFETs at half the figure of merit, while 300 A DC handles >3 kW converter power levels with paralleled phase count kept low. The 80 V VDS leaves comfortable margin for 48 V nominal plus 5-10 V transient overshoot, and the OptiMOS 5 process minimizes reverse-recovery charge for zero-voltage-switching topologies.
推荐
Industrial High-Current Solenoid / Relay Driver
The IAUT300N08S5N014ATMA1 can drive large industrial solenoids and contactors from 24-48 V battery rails where peak currents exceed 100 A and switch events occur in <10 ms. Its 100 % avalanche rating absorbs the inductive kick at turn-off, eliminating external TVS clamp circuits and saving BOM cost. The 300 A continuous ID comfortably handles the steady-state holding current of hydraulic valves, while 175 °C junction allows sealed-enclosure mounting near the actuator.
推荐
48V Inverter Power Stage (Auxiliary Drives)
The IAUT300N08S5N014ATMA1 forms the inverter power stage for 48 V three-phase auxiliary drives used in industrial automation and mild-hybrid accessory drives. Its 300 A ID per switch allows paralleled design without device count explosion, while OptiMOS 5's low Qg reduces drive loss at 20-50 kHz PWM. The HSOF-8-1 tab doubles as the phase node thermal anchor, simplifying PCB layout when paired with the recommended Infineon TLE9180D32QKXUMA1 gate driver.
推荐
推荐产品汇总
工程参考数据： IAUT300N08S5N014ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUS300N08S5N014TATMA1 | IAUT300N08S5N011 | IAUC120N06S5L015ATMA1 | ISC015N06NM5ATMA1 | IPB60R280P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8-1 (8-pin + tab) | PG-HSOF-16-2 (similar tab family, larger) | PG-HSOF-8-1 (same footprint) | PG-TDSON-8 (similar tab family) | PG-TDSON-8 (similar tab family) | PG-TO263-3 (D2PAK tab family) |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 60 V (-25 %) | 60 V (-25 %) | 600 V (different voltage class) |
| RDS(on) typ @ VGS=10 V | 1.4 mΩ | 1.4 mΩ | 1.1 mΩ (-21 %) | 1.5 mΩ | 1.5 mΩ | 280 mΩ (different class) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial grade |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | CoolMOS P7 |
关键差异点
- Ultra-low 1.4 mΩ RDS(on) in compact PG-HSOF-8-1 （对比 IAUC120N06S5L015ATMA1)
- Higher VDS rating (80 V vs 60 V) （对比 ISC015N06NM5ATMA1)
- AEC-Q101 automotive qualification （对比 IPB60R280P7ATMA1)
设计说明
Estimated thermal analysis: at PD=10 W continuous, the PG-HSOF-8-1 with θJA of approximately 50 °C/W on a 1 oz FR4 100 cm² copper pour yields a junction-to-ambient rise of ~10 °C above ambient. For sustained 300 A operation, the drain tab must be soldered to at least 200 cm² of 2 oz copper on both top and bottom layers with thermal vias (24 vias minimum, 0.3 mm drill) to keep Tj below 150 °C at TA=85 °C ambient. Derate ID linearly per the SOA curve.
Minimize the high-side / low-side switching-node copper loop to control parasitic inductance and VDS overshoot. Place the gate driver within 10 mm of the GATE pin and use a 10 Ω gate resistor to damp ringing. Keep the source return path directly under the source pins and never share it with the gate-drive return - use a Kelvin source connection when possible. Decouple VCC of the gate driver with a 100 nF X7R placed within 5 mm of the IC.
Do not exceed VGS=±20 V (transient). Use a gate-source resistor (10 kΩ typical) to keep the device off during controller power-up and prevent inadvertent turn-on from Miller coupling. Avoid operating continuously above 175 °C Tj. For pulse currents above the DC SOA, limit pulse duration and duty cycle per the single-pulse thermal impedance curve (ZthJC) - at 1 ms pulse the part can briefly carry 5-10x the DC rating.
Use NSMD (non-solder mask defined) land pads to increase solder joint reliability on the source pins. For the drain tab, use a single large NSMD pad (~7 mm × 7 mm) with thermal via array in the centre. The MSL1 rating allows unlimited floor life at ≤30 °C/85 % RH, but still respect standard ESD handling precautions during assembly (HBM Class 1C, CDM Class C3 typical for OptiMOS 5).
合规信息
Infineon product page labels the part as Green Product (RoHS compliant). AEC-Q101 automotive qualified per the IAUT family designation and Newark listing. Halogen-free status not explicitly stated in the verified web data - set to unknown.
