IPB70N10S3L12ATMA1 vs IPD90P04P4L04ATMA2 对比

详细并排对比 IPB70N10S3L12ATMA1 出自 Infineon 和 IPD90P04P4L04ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 ✓ 量产中

规格对比

参数 IPB70N10S3L12ATMA1 IPD90P04P4L04ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.65 $1.22
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) —
晶体管类型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
工作结温 -55 °C to +175 °C —
封装 / 外壳 PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified AEC-Q101 qualified
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
无卤 Yes —
Part Number — IPD90P04P4L04ATMA2
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
工作温度范围 — -55 C to +175 C
封装 — PG-TO252-3-313 (DPAK)
引脚数 — 3 (2 + Tab)
RoHS 状态 — Compliant
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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