IPC50N04S5L5R5ATMA1 vs IAUCN08S7L024ATMA1 对比
详细并排对比 IPC50N04S5L5R5ATMA1 出自 Infineon 和 IAUCN08S7L024ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 量产中规格对比
| 参数 | IPC50N04S5L5R5ATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $1.68 |
| 晶体管类型 | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| 工作温度范围 | -55 °C to +175 °C | -55C to +175C (Tj) |
| 封装 | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| 安装类型 | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | — | OptiMOS™ 7 N-channel trench MOSFET |
| Continuous Drain Current (ID) | — | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | — | 150 A |
| On-Resistance RDS(on) max | — | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |