IPC50N04S5L5R5ATMA1 vs IAUCN08S7L024ATMA1 Comparison

Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and IAUCN08S7L024ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L024ATMA1 IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 ✓ Active

Specification Comparison

Parameter IPC50N04S5L5R5ATMA1 IAUCN08S7L024ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Operating Temperature Range -55 °C to +175 °C -55C to +175C (Tj)
Package PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8-34 (SSO8 5x6 mm²)
Mounting Type Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology — OptiMOS™ 7 N-channel trench MOSFET
Continuous Drain Current (ID) — 177 A (Tj)
Continuous Drain Current (Silicon-limited) — 150 A
On-Resistance RDS(on) max — 2.4 mΩ at VGS=10 V
Power Dissipation (PD) — 148 W (Tc)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Avalanche Energy Rated — Yes (single-pulse)
Automotive Qualification — AEC-Q101 qualified
RoHS Status — Compliant
MSL Level — MSL1 (per JEDEC J-STD-020)

Datasheets & Resources

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