IPC50N04S5L5R5ATMA1 vs IAUCN08S7L024ATMA1 비교
다음의 상세 나란히 비교: IPC50N04S5L5R5ATMA1 제조: Infineon 및 IAUCN08S7L024ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 활성사양 비교
| 파라미터 | IPC50N04S5L5R5ATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.36 | $1.68 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| 동작 온도 범위 | -55 °C to +175 °C | -55C to +175C (Tj) |
| 패키지 | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8-34 (SSO8 5x6 mm²) |
| 실장 유형 | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | — | OptiMOS™ 7 N-channel trench MOSFET |
| Continuous Drain Current (ID) | — | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | — | 150 A |
| On-Resistance RDS(on) max | — | 2.4 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 상태 | — | Compliant |
| MSL 레벨 | — | MSL1 (per JEDEC J-STD-020) |