IPC70N04S5L4R2ATMA1 vs IPC50N04S55R8ATMA1 对比

详细并排对比 IPC70N04S5L4R2ATMA1 出自 Infineon 和 IPC50N04S55R8ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 量产中
Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ 量产中

规格对比

参数 IPC70N04S5L4R2ATMA1 IPC50N04S55R8ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.61
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 (trench MOSFET)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封装 PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-33 (TDSON EP)
Operating Temperature (Tj) -55°C to +175°C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260°C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
RoHS 状态 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at Tc — 50 A
Power Dissipation (P_D) at Tc — 42 W
R_DS(on) Max (V_GS=10V) — 5.8 mΩ
Output Capacitance (C_oss) — 305 pF
Gate Threshold (V_GS(th)) — [DATA_NEEDED: V_GS(th)]
工作温度范围 — -55 °C to +175 °C
Avalanche Rating — 100% Avalanche Tested
RoHS / Green — RoHS compliant, Green Product
Polarity — Enhancement Mode

数据手册与资源

浏览全部产品 创建 BOM 获取报价