IPC70N04S5L4R2ATMA1 vs IPC50N04S55R8ATMA1 비교

다음의 상세 나란히 비교: IPC70N04S5L4R2ATMA1 제조: Infineon 및 IPC50N04S55R8ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 활성
Infineon
IPC50N04S55R8ATMA1 IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 - 40V 50A OptiMOS 5 N-FET | Infineon

IPC50N04S55R8ATMA1 ✓ 활성

사양 비교

파라미터 IPC70N04S5L4R2ATMA1 IPC50N04S55R8ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.78 $0.61
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 (trench MOSFET)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
패키지 PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-33 (TDSON EP)
Operating Temperature (Tj) -55°C to +175°C —
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (up to 260°C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
RoHS 상태 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at Tc — 50 A
Power Dissipation (P_D) at Tc — 42 W
R_DS(on) Max (V_GS=10V) — 5.8 mΩ
Output Capacitance (C_oss) — 305 pF
Gate Threshold (V_GS(th)) — [DATA_NEEDED: V_GS(th)]
동작 온도 범위 — -55 °C to +175 °C
Avalanche Rating — 100% Avalanche Tested
RoHS / Green — RoHS compliant, Green Product
Polarity — Enhancement Mode

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청