IPD135N03LGATMA1 vs BSC016N06NSATMA1 对比
详细并排对比 IPD135N03LGATMA1 出自 Infineon 和 BSC016N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD135N03LGATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) | 30 A (Tc) | — |
| Power Dissipation (PD) | 31 W (Tc) | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK), Surface Mount | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) | — |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) | — |
| 工作温度范围 | -55°C to +175°C (TJ max typical for OptiMOS) | -55 °C to +150 °C |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free Finish | Yes | — |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) | — |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Total Gate Charge (Qg) | — | 71 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| 封装 | — | PG-TDSON-8 FL (SuperSO8 5x6) |
| Gate Drive (recommended) | — | 10 V |
| Technology | — | OptiMOS™ 5 |