IPD135N03LGATMA1 vs BSC016N06NSATMA1 Comparison

Detailed side-by-side comparison of IPD135N03LGATMA1 by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Active

Specification Comparison

Parameter IPD135N03LGATMA1 BSC016N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) 30 A (Tc) —
Power Dissipation (PD) 31 W (Tc) —
Package / Case PG-TO252-3 (DPAK), Surface Mount —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec) —
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec) —
Operating Temperature Range -55°C to +175°C (TJ max typical for OptiMOS) -55 °C to +150 °C
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant Compliant
Lead-Free Finish Yes —
Qualification Industrial (Infineon OptiMOS™ standard grade) —
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
Package — PG-TDSON-8 FL (SuperSO8 5x6)
Gate Drive (recommended) — 10 V
Technology — OptiMOS™ 5

Datasheets & Resources

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