IPD380P06NMATMA1 vs BSZ180P03NS3EGATMA1 对比
详细并排对比 IPD380P06NMATMA1 出自 Infineon 和 BSZ180P03NS3EGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD380P06NMATMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.45 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| 连续漏极电流（TC=25°C） | 35 A | — |
| Power Dissipation (Tc) | 125 W | 40 W |
| Technology | OptiMOS P-channel trench | OptiMOS P3 |
| 封装 | PG-TO252-3 (DPAK), surface mount | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | -55°C to +150°C (TJ) |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | Yes |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| 晶体管类型 | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) - Ta | — | 9 A |
| Continuous Drain Current (ID) - Tc | — | 39.5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | — | 18 mΩ @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | — | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | — | 2.1 W |