IPD60R1K0PFD7SAUMA1 vs IPD60R600PFD7SAUMA1 对比
详细并排对比 IPD60R1K0PFD7SAUMA1 出自 Infineon 和 IPD60R600PFD7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ 量产中规格对比
| 参数 | IPD60R1K0PFD7SAUMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.45 |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | Superjunction (CoolMOS) |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | — |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| 封装 | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (TJ) | — |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| RoHS 状态 | Compliant | Compliant |
| Series | CoolMOS PFD7 consumer / superjunction | CoolMOS PFD7 |
| Manufacturer | — | Infineon Technologies |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| 工作温度 | — | -55°C to +150°C (Tj) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| Reel Quantity | — | 2500 |