IPD60R1K0PFD7SAUMA1 vs IPD60R600PFD7SAUMA1 Comparison

Detailed side-by-side comparison of IPD60R1K0PFD7SAUMA1 by Infineon and IPD60R600PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 βœ“ Active

Specification Comparison

Parameter IPD60R1K0PFD7SAUMA1 IPD60R600PFD7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.45
Technology CoolMOS PFD7 Superjunction (SJ) MOSFET Superjunction (CoolMOS)
Polarity / Channel Type N-Channel Enhancement Mode β€”
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID) at TC 4.7 A β€”
Power Dissipation (PD) at TC 26 W β€”
Drain-Source On-Resistance (RDS(on)) 1 Ξ© @ VGS=10V β€”
Gate Threshold Voltage (VGS(th)) Β±20 V (max gate-source) β€”
Gate Charge (QG) 6 nC @ VGS=10V β€”
Output Capacitance (Coss) 230 pF @ 400 V β€”
Package PG-TO252-3 (DPAK, 2 leads + tab, SC-63) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (TJ) β€”
Gate Drive Voltage (recommended) 10 V (full enhancement) β€”
RoHS Status Compliant Compliant
Series CoolMOS PFD7 consumer / superjunction CoolMOS PFD7
Manufacturer β€” Infineon Technologies
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS) β€” 600 V
Continuous Drain Current (I_D) β€” 6 A (Tc)
R_DS(on) Max β€” 600 mΞ© @ V_GS = 10 V, I_D = 1.7 A
Total Gate Charge (Q_g) β€” 8.5 nC
Output Capacitance (C_oss) β€” 8 pF @ 400 V
Power Dissipation (P_D) β€” 31 W (Tc)
Gate Threshold Voltage (V_GS(th)) β€” 3.5 V (typ)
Operating Temperature β€” -55Β°C to +150Β°C (Tj)
MSL Level β€” 1 (per JEDEC J-STD-020)
Reel Quantity β€” 2500

Datasheets & Resources

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