IPD60R360P7ATMA1 vs IPD65R380E6ATMA1 对比
详细并排对比 IPD60R360P7ATMA1 出自 Infineon 和 IPD65R380E6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60R360P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS™ E6 |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | 600 V | 650 V |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Continuous Drain Current (I_D) at T_C=25°C | 9 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max @ V_GS=10V | 360 mΩ | — |
| Total Power Dissipation (P_tot) at T_C=25°C | 41 W | — |
| 工作结温 | -55°C to +150°C | — |
| Storage Temperature | -55°C to +150°C | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK), surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) | — |
| ESD Protection (HBM) | >2 kV (per datasheet) | — |
| MSL 等级 | 1 (per JEDEC J-STD20) | 1 |
| RoHS Compliance | Compliant | — |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| 工作温度范围 | — | -55 °C to +150 °C |
| 封装 | — | PG-TO252-3 (DPAK), surface mount |
| RoHS 状态 | — | Compliant |