IPD60R360P7ATMA1 vs IPD65R380E6ATMA1 Comparison

Detailed side-by-side comparison of IPD60R360P7ATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R360P7ATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS™ E6
Technology Superjunction (SJ) N-channel MOSFET Superjunction (CoolMOS™)
Drain-Source Voltage (V_DS) 600 V 650 V
Gate-Source Voltage (V_GS) ±20 V (max)
Continuous Drain Current (I_D) at T_C=25°C 9 A
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current]
R_DS(on) max @ V_GS=10V 360 mΩ
Total Power Dissipation (P_tot) at T_C=25°C 41 W
Operating Junction Temperature -55°C to +150°C
Storage Temperature -55°C to +150°C
Package / Case PG-TO252-3 (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) typ 3.5 V (typ)
ESD Protection (HBM) >2 kV (per datasheet)
MSL Level 1 (per JEDEC J-STD20) 1
RoHS Compliance Compliant
Qualification Industrial grade per JEDEC (J-STD20, JESD22)
Transistor Type N-Channel MOSFET
Continuous Drain Current (I_D) at T_C 10.6 A
R_DS(on) max at V_GS=10V 380 mΩ
R_DS(on) test conditions 3.2 A, 10 V
Gate-Source Voltage (V_GS) max ±20 V
Gate Threshold Voltage (V_GS(th)) 3.5 V typ
Gate Charge (Q_G) 39 nC at 10 V
Input Capacitance (C_iss) 710 pF at 100 V
Power Dissipation (P_D) at T_C 83 W
Operating Temperature Range -55 °C to +150 °C
Package PG-TO252-3 (DPAK), surface mount
RoHS Status Compliant

Datasheets & Resources

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