IPD60R360P7ATMA1 vs ISC015N06NM5ATMA1 对比
详细并排对比 IPD60R360P7ATMA1 出自 Infineon 和 ISC015N06NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60R360P7ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.61 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Continuous Drain Current (I_D) at T_C=25°C | 9 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max @ V_GS=10V | 360 mΩ | — |
| Total Power Dissipation (P_tot) at T_C=25°C | 41 W | — |
| 工作结温 | -55°C to +150°C | — |
| Storage Temperature | -55°C to +150°C | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK), surface mount | — |
| 安装类型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) | — |
| ESD Protection (HBM) | >2 kV (per datasheet) | — |
| MSL 等级 | 1 (per JEDEC J-STD20) | — |
| RoHS Compliance | Compliant | — |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| 封装 | — | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| 工作温度范围 | — | -55 C to +175 C |
| RoHS 状态 | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |