IPD80R1K4P7ATMA1 vs IPD70R1K4P7SAUMA1 对比
详细并排对比 IPD80R1K4P7ATMA1 出自 Infineon 和 IPD70R1K4P7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R1K4P7ATMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | N-Channel Superjunction | Superjunction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 700 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | 4 A |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| 功耗（Ptot） | 32 W | — |
| 工作结温 | -55C to +150C | -55C to +150C |
| 封装 | PG-TO252-2 (DPAK) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain/Tab, Source) | 3 (Gate, Drain, Source) |
| RoHS 状态 | Compliant | Compliant |
| REACH Status | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes | Yes (100% avalanche tested) |
| Body Diode | Integrated, fast recovery | — |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| ESD Protection | — | Integrated (per datasheet) |