IPD80R280P7ATMA1 vs IPC100N04S51R7ATMA1 对比
详细并排对比 IPD80R280P7ATMA1 出自 Infineon 和 IPC100N04S51R7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R280P7ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS P7) | — |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (SS08 leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55C to +150C | -55 °C to +175 °C |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 状态 | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | MSL1 (260 °C peak reflow) |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |