IPD80R280P7ATMA1 vs IPC100N04S51R7ATMA1 비교
다음의 상세 나란히 비교: IPD80R280P7ATMA1 제조: Infineon 및 IPC100N04S51R7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD80R280P7ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| 트랜지스터 유형 | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS P7) | — |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (SS08 leadless) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55C to +150C | -55 °C to +175 °C |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 상태 | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | MSL1 (260 °C peak reflow) |
| Series | — | OptiMOS-5 |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |