IPD80R280P7ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IPD80R280P7ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IPD80R280P7ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET, Enhancement Mode |
| Technology | Superjunction (CoolMOS P7) | β |
| Drain-Source Voltage (V_DS) | 800 V | β |
| Continuous Drain Current (I_D, Tc) | 17 A | β |
| R_DS(on) max at V_GS=10V | 280 mOhm | β |
| Power Dissipation (P_D, Tc) | 101 W | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55C to +150C | -55 Β°C to +175 Β°C |
| ESD Protection | Integrated (per datasheet) | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (260 Β°C peak reflow) |
| Series | β | OptiMOS-5 |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| Built-in Body Diode | β | Yes |