IPG16N10S461AATMA1 vs IAUCN10S7N021ATMA1 对比
详细并排对比 IPG16N10S461AATMA1 出自 Infineon 和 IAUCN10S7N021ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 量产中规格对比
| 参数 | IPG16N10S461AATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $2.05 |
| Manufacturer | Infineon Technologies | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) | 16 A | — |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 175 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| 工作结温 | — | -55 °C to +175 °C |
| Qualification | — | AEC-Q101 (Automotive) |