IPL60R085P7AUMA1 vs IPL60R105P7AUMA1 对比
详细并排对比 IPL60R085P7AUMA1 出自 Infineon 和 IPL60R105P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 量产中规格对比
| 参数 | IPL60R085P7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.65 | $0.82 |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 39 A | — |
| Continuous Drain Current (ID, Tc=100°C) | 24 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΩ at VGS=10 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Maximum Power Dissipation (Ptot) | 154 W | — |
| 工作结温 | -40 °C to +150 °C | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| ESD Robustness (HBM) | >2 kV (all pins) | — |
| Technology | CoolMOS P7 superjunction (7th generation) | Superjunction (SJ) N-Channel Power MOSFET |
| 封装 | PG-VSON-4 (VSON-4, source-down) | PG-VSON-4 (4-pin SMD with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Polarity | N-channel | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| 工作温度范围 | — | -55C to +150C |
| Channel Type | — | N-Channel |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| 无卤 | — | Yes |
| Lead-Free | — | Yes |