IPN80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 对比
详细并排对比 IPN80R1K4P7ATMA1 出自 Infineon 和 IPN80R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPN80R1K4P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.34 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (500V-950V) | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 4 A | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 1200 mOhm | — |
| Power Dissipation (Tc) | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (CoolMOS) |
| 封装 | PG-SOT223 (surface mount) | SOT-223 (3-pin, 2 + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C | -55°C to +150°C (TJ) |
| RoHS 状态 | Compliant | — |
| Grade | Industrial | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Family / Series | — | CoolMOS P7 |
| Drain-Source Voltage VDSS | — | 800 V |
| Continuous Drain Current ID (Tc) | — | 4.5 A |
| Maximum RDS(on) | — | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | — | 6.8 W |
| Gate-Source Voltage VGSS | — | [DATA_NEEDED: VGSS absolute maximum] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| ESD Protection | — | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | — | Compliant |