IPN80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 Comparison
Detailed side-by-side comparison of IPN80R1K4P7ATMA1 by Infineon and IPN80R1K2P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPN80R1K4P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (500V-950V) | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 4 A | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 1200 mOhm | — |
| Power Dissipation (Tc) | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (CoolMOS) |
| Package | PG-SOT223 (surface mount) | SOT-223 (3-pin, 2 + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55°C to +150°C (TJ) |
| RoHS Status | Compliant | — |
| Grade | Industrial | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Family / Series | — | CoolMOS P7 |
| Drain-Source Voltage VDSS | — | 800 V |
| Continuous Drain Current ID (Tc) | — | 4.5 A |
| Maximum RDS(on) | — | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | — | 6.8 W |
| Gate-Source Voltage VGSS | — | [DATA_NEEDED: VGSS absolute maximum] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| ESD Protection | — | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | — | Compliant |