IPN80R4K5P7ATMA1 vs IPN95R1K2P7ATMA1 对比

详细并排对比 IPN80R4K5P7ATMA1 出自 Infineon 和 IPN95R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 量产中

规格对比

参数 IPN80R4K5P7ATMA1 IPN95R1K2P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.30 $0.36
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
封装 PG-SOT223 (surface mount, 3-pin + tab) SOT-223-3 (PG-SOT223)
安装类型 Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) CoolMOS P7 (Super Junction)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
RoHS 状态 Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Drain-to-Source Voltage (V_DSS) — 950 V
Continuous Drain Current (I_D) at T_C — 6 A
Maximum On-Resistance R_DS(on) at V_GS=10V — 1200 mOhm (1.2 Ohm)
Gate Drive Voltage (max R_DS(on)) — 10 V
Power Dissipation (T_C) — 7 W
引脚数量 — 3 (2 + Tab)
Series — CoolMOS P7
工作温度范围 — -55C to +150C
Packaging — Tape & Reel
Part Status — Active

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