IPN80R4K5P7ATMA1 vs IPN95R1K2P7ATMA1 Vergleich
Detaillierter Direktvergleich von IPN80R4K5P7ATMA1 von Infineon und IPN95R1K2P7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPN80R4K5P7ATMA1 - 800V 1.5A CoolMOS P7 N-Channel MOSFET | Infineon
IPN80R4K5P7ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IPN80R4K5P7ATMA1 | IPN95R1K2P7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,30 | $0,36 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 1.5 A | — |
| Power Dissipation (Pd, Tc) | 6 W | — |
| On-Resistance (RDS(on), VGS=10V) | 4.5 ohm max | — |
| Gehäuse | PG-SOT223 (surface mount, 3-pin + tab) | SOT-223-3 (PG-SOT223) |
| Montageart | Surface Mount | Surface Mount |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS P7 (Super Junction) |
| Operating Mode | Enhancement-mode | — |
| Grade | Industrial | — |
| Application | Low-power SMPS, flyback converters, LED drivers | — |
| RoHS-Status | Compliant | Compliant |
| Reel / Tape Packaging | Tape & Reel (T/R) | — |
| Drain-to-Source Voltage (V_DSS) | — | 950 V |
| Continuous Drain Current (I_D) at T_C | — | 6 A |
| Maximum On-Resistance R_DS(on) at V_GS=10V | — | 1200 mOhm (1.2 Ohm) |
| Gate Drive Voltage (max R_DS(on)) | — | 10 V |
| Power Dissipation (T_C) | — | 7 W |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Series | — | CoolMOS P7 |
| Betriebstemperaturbereich | — | -55C to +150C |
| Packaging | — | Tape & Reel |
| Part Status | — | Active |