IPT015N10NF2SATMA1 vs IPT017N12NM6ATMA1 对比
详细并排对比 IPT015N10NF2SATMA1 出自 Infineon 和 IPT017N12NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPT015N10NF2SATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $1.85 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (TOLL) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 |
| Gate Drive Voltage (typ) | 10 V | — |
| 单脉冲雪崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| 工作温度 | — | -55C to +175C |
| 引脚数量 | — | 8 + tab |
| Packaging | — | Tape & Reel |