IPT015N10NF2SATMA1 vs IPT017N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT015N10NF2SATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOF-8 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 |
| Gate Drive Voltage (typ) | 10 V | — |
| Single Pulse Avalanche Energy | [DATA_NEEDED: EAS value] | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 395 W |
| Operating Temperature | — | -55C to +175C |
| Pin Count | — | 8 + tab |
| Packaging | — | Tape & Reel |