IPW60R041C6FKSA1 vs IRFP2907PBF 对比

详细并排对比 IPW60R041C6FKSA1 出自 Infineon 和 IRFP2907PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPW60R041C6FKSA1 IRFP2907PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $5.40 $2.45
Technology CoolMOS™ C6 (Superjunction N-channel) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
工作温度范围 -55°C to +150°C —
封装 PG-TO247-3-1 (TO-247-3) —
安装类型 Through Hole —
MSL 等级 Not Applicable (Through-hole) —
RoHS 状态 Compliant —
Lead-Free Yes Yes
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
引脚数量 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Avalanche Rated — Yes (repetitive avalanche rated)
Body Diode — Integral (no external anti-parallel diode required)

数据手册与资源

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