IPW60R041C6FKSA1 vs IRFP2907PBF Vergleich

Detaillierter Direktvergleich von IPW60R041C6FKSA1 von Infineon und IRFP2907PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPW60R041C6FKSA1 IRFP2907PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,40 $2,45
Technology CoolMOS™ C6 (Superjunction N-channel) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Betriebstemperaturbereich -55°C to +150°C —
Gehäuse PG-TO247-3-1 (TO-247-3) —
Montageart Through Hole —
MSL-Level Not Applicable (Through-hole) —
RoHS-Status Compliant —
Lead-Free Yes Yes
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
Pin-Anzahl — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Avalanche Rated — Yes (repetitive avalanche rated)
Body Diode — Integral (no external anti-parallel diode required)

Datenblätter & Ressourcen

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