IPW60R041C6FKSA1 vs IRFP2907PBF Comparison

Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and IRFP2907PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPW60R041C6FKSA1 IRFP2907PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Nrnd Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $2.45
Technology CoolMOSβ„’ C6 (Superjunction N-channel) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 77.5 A β€”
Power Dissipation (PD, Tc=25Β°C) 481 W β€”
On-State Resistance (RDS(on)) 41 mΞ© at VGS=10V β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Rise Time (tr) [DATA_NEEDED: tr value] β€”
Fall Time (tf) [DATA_NEEDED: tf value] β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package PG-TO247-3-1 (TO-247-3) β€”
Mounting Type Through Hole β€”
MSL Level Not Applicable (Through-hole) β€”
RoHS Status Compliant β€”
Lead-Free Yes Yes
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFP2907PBF
Drain-to-Source Voltage (V_DSS) β€” 75 V
Continuous Drain Current (I_D) at T_C = 25 C β€” 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) β€” 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C β€” 470 W
Total Gate Charge (Q_g) β€” 410 nC
Maximum Junction Operating Temperature β€” +175 C
Package / Mounting Type β€” TO-247AC (Through Hole)
Pin Count β€” 3 (Gate, Drain, Source)
RoHS Compliance β€” Yes (Pb-free)
Avalanche Rated β€” Yes (repetitive avalanche rated)
Body Diode β€” Integral (no external anti-parallel diode required)

Datasheets & Resources

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