IQDH29NE2LM5CGSCATMA1 vs IQD016N08NM5ATMA1 对比
详细并排对比 IQDH29NE2LM5CGSCATMA1 出自 Infineon 和 IQD016N08NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQDH29NE2LM5CGSCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.84 | $1.68 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (Ta) | 75 A | 31 A |
| Continuous Drain Current (Tc) | 789 A | 323 A |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| 封装 | PG-WHTFN-9-U02 (WHTFN EP) | PG-TSON-8-9 (PQFN 5x6) |
| 引脚数量 | 9 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| 工作温度范围 | — | -55C to +150C (junction, standard MOSFET rating) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |