IQDH29NE2LM5CGSCATMA1 vs IQD016N08NM5ATMA1 Comparison
Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQD016N08NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IQDH29NE2LM5CGSCATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 5 Power-MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (Ta) | 75 A | 31 A |
| Continuous Drain Current (Tc) | 789 A | 323 A |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical] |
| Package | PG-WHTFN-9-U02 (WHTFN EP) | PG-TSON-8-9 (PQFN 5x6) |
| Pin Count | 9 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| On-Resistance RDS(on) typical | — | 1.6 mΩ |
| Operating Temperature Range | — | -55C to +150C (junction, standard MOSFET rating) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typical] |