IQDH88N06LM5CGSCATMA1 vs IAUC120N06S5L015ATMA1 对比
详细并排对比 IQDH88N06LM5CGSCATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ 量产中规格对比
| 参数 | IQDH88N06LM5CGSCATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $0.92 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| 连续漏极电流（TC=25°C） | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| 功耗（TC=25°C） | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55C to +175C (Tj) |
| 封装 | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8-43 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount (exposed pad) |
| 引脚数量 | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS 状态 | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |