IQDH88N06LM5CGSCATMA1 vs IQE018N06NM6CGATMA1 对比
详细并排对比 IQDH88N06LM5CGSCATMA1 出自 Infineon 和 IQE018N06NM6CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQDH88N06LM5CGSCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $1.21 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| 连续漏极电流（TC=25°C） | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| 功耗（TC=25°C） | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| 封装 | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TTFN-9-3 (TOLL/TTFN) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | — |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |