IQE013N04LM6SCATMA1 vs ISC015N06NM5ATMA1 对比

详细并排对比 IQE013N04LM6SCATMA1 出自 Infineon 和 ISC015N06NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ 量产中

规格对比

参数 IQE013N04LM6SCATMA1 ISC015N06NM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.02 $0.62
FET Type N-Channel —
Technology OptiMOS (trench MOSFET) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 1.35 mΩ —
Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C 31 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) —
Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C 205 A —
Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C 2.5 W —
Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C 107 W —
Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V 41 nC —
Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V 3800 pF —
封装 PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad PG-TDSON-8 (PQFN 5x6) Drain-Down
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: T_J min/max] -55 C to +175 C
RoHS 状态 Compliant Compliant
Packaging Tape & Reel —
Part Family OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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