IQE013N04LM6SCATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6SCATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β Active
Specification Comparison
| Parameter | IQE013N04LM6SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.62 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΞ© | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 31 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | β |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | 205 A | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | 2.5 W | β |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | 107 W | β |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | β |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | β |
| Package | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: T_J min/max] | -55 C to +175 C |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Part Family | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |